InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up 140 mW output is achieved in a circularly-symmetric single transverse (TEM 00 ) longitudinal mode, tunable from 683 693 With intensity stabilization pump frequency-stabilization VECSEL resonator reference cavity via Pound-Drever-Hall technique, we measure spectral density frequency noise, reporting sub-kHz linewidth at The relative noise (RIN) <−130 dBc/Hz all frequencies above 100 kHz. This compact laser system suitable use quantum technologies, particularly those based on laser-cooled trapped strontium atoms.